? semiconductor components industries, llc, 2013 june, 2013 ? rev. 9 1 publication order number: bc856bdw1t1/d bc856bdw1t1g, sbc856bdw1t1gseries, bc857bdw1t1g, sbc857bdw1t1gseries, bc858cdw1t1g series dual general purpose transistors pnp duals these transistors are designed for general purpose amplifier applications. they are housed in the sot ? 363/sc ? 88 which is designed for low power surface mount applications. features ? s prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? these devices are pb ? free, halogen free/bfr free and are rohs compliant* maximum ratings rating symbol value unit collector ? emitter voltage bc856, sbc856 bc857, sbc857 bc858 v ceo ? 65 ? 45 ? 30 v collector ? base voltage bc856, sbc856 bc857, sbc857 bc858 v cbo ? 80 ? 50 ? 30 v emitter ? base voltage v ebo ? 5.0 v collector current ? continuous i c ? 100 madc collector current ? peak i c ? 200 madc thermal characteristics characteristic symbol max unit total device dissipation per device fr ? 5 board (note 1) t a = 25 c derate above 25 c p d 380 250 3.0 mw mw/ c mw/ c thermal resistance, junction ? to ? ambient r ja 328 c/w junction and storage temperature range t j , t stg ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr ? 5 = 1.0 x 0.75 x 0.062 in *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. sot ? 363/sc ? 88 case 419b style 1 marking diagram q 1 (1) (2) (3) (4) (5) (6) q 2 http://onsemi.com see detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. ordering information 3x = specific device code x = b, f, g, or l (see ordering information) m = date code =pb ? free package 3x m 1 6 (note: microdot may be in either location)
bc856bdw1t1g, sbc856bdw1t1g series, bc857bdw1t1g, sbc857bdw1t1g series, bc858cdw1t1g series http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? emitter breakdown voltage (i c = ? 10 ma) bc856, sbc856 series bc857, sbc857 series bc858 series v (br)ceo ? 65 ? 45 ? 30 ? ? ? ? ? ? v collector ? emitter breakdown voltage (i c = ? 10 a, v eb = 0) bc856, sbc856 series bc857b, sbc857b only bc858 series v (br)ces ? 80 ? 50 ? 30 ? ? ? ? ? ? v collector ? base breakdown voltage (i c = ? 10 a) bc856, sbc856 series bc857, sbc857 series bc858 series v (br)cbo ? 80 ? 50 ? 30 ? ? ? ? ? ? v emitter ? base breakdown voltage (i e = ? 1.0 a) bc856, sbc856 series bc857, sbc857 series bc858 series v (br)ebo ? 5.0 ? 5.0 ? 5.0 ? ? ? ? ? ? v collector cutoff current (v cb = ? 30 v) (v cb = ? 30 v, t a = 150 c) i cbo ? ? ? ? ? 15 ? 4.0 na a on characteristics dc current gain (i c = ? 10 a, v ce = ? 5.0 v) bc856b, sbc856b, bc857b, sbc857b bc857c, sbc857c, bc858c (i c = ? 2.0 ma, v ce = ? 5.0 v) bc856b, sbc856b, bc857b, sbc857b bc857c, sbc857c, bc858c h fe ? ? 220 420 150 270 290 520 ? ? 475 800 ? collector ? emitter saturation voltage (i c = ? 10 ma, i b = ? 0.5 ma) (i c = ? 100 ma, i b = ? 5.0 ma) v ce(sat) ? ? ? ? ? 0.3 ? 0.65 v base ? emitter saturation voltage (i c = ? 10 ma, i b = ? 0.5 ma) (i c = ? 100 ma, i b = ? 5.0 ma) v be(sat) ? ? ? 0.7 ? 0.9 ? ? v base ? emitter on voltage (i c = ? 2.0 ma, v ce = ? 5.0 v) (i c = ? 10 ma, v ce = ? 5.0 v) v be(on) ? 0.6 ? ? ? ? 0.75 ? 0.82 v small ? signal characteristics current ? gain ? bandwidth product (i c = ? 10 ma, v ce = ? 5.0 vdc, f = 100 mhz) f t 100 ? ? mhz output capacitance (v cb = ? 10 v, f = 1.0 mhz) c ob ? ? 4.5 pf noise figure (i c = ? 0.2 ma, v ce = ? 5.0 vdc, r s = 2.0 k , f = 1.0 khz, bw = 200 hz) nf ? ? 10 db
bc856bdw1t1g, sbc856bdw1t1g series, bc857bdw1t1g, sbc857bdw1t1g series, bc858cdw1t1g series http://onsemi.com 3 typical characteristics ? bc856/sbc856 figure 1. dc current gain i c , collector current (ma) figure 2. ?on? voltage i c , collector current (ma) -0.8 -1.0 -0.6 -0.2 -0.4 1.0 2.0 -0.1 -1.0 -10 -200 -0.2 0.2 0.5 -0.2 -1.0 -10 -200 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = -5.0 v figure 3. collector saturation region i b , base current (ma) figure 4. base ? emitter temperature coefficient i c , collector current (ma) -1.0 -1.2 -1.6 -2.0 -0.02 -1.0 -10 0 -20 -0.1 -0.4 -0.8 v ce , collector-emitter voltage (volts) vb , temperature coefficient (mv/ c) -0.2 -2.0 -10 -200 -1.0 t j = 25 c i c = -10 ma h fe , dc current gain (normalized) v, voltage (volts) v ce = -5.0 v t a = 25 c 0 -0.5 -2.0 -5.0 -20 -50 -100 -0.05 -0.2 -0.5 -2.0 -5.0 -100 ma -20 ma -1.4 -1.8 -2.2 -2.6 -3.0 -0.5 -5.0 -20 -50 -100 -55 c to 125 c vb for v be -2.0 -5.0 -20 -50 -100 figure 5. capacitance v r , reverse voltage (volts) 40 figure 6. current ? gain ? bandwidth product i c , collector current (ma) -0.1 -0.2 -1.0 -50 2.0 -2.0 -10 -100 100 200 500 50 20 20 10 6.0 4.0 -1.0 -10 -100 v ce = -5.0 v c, capacitance (pf) f, current-gain - bandwidth product t -0.5 -5.0 -20 t j = 25 c c ob c ib 8.0 -50 ma -200 ma
bc856bdw1t1g, sbc856bdw1t1g series, bc857bdw1t1g, sbc857bdw1t1g series, bc858cdw1t1g series http://onsemi.com 4 typical characteristics ? bc857/sbc857/bc858 figure 7. normalized dc current gain i c , collector current (madc) 2.0 figure 8. ?saturation? and ?on? voltages i c , collector current (madc) -0.2 0.2 figure 9. collector saturation region i b , base current (ma) figure 10. base ? emitter temperature coefficient i c , collector current (ma) -0.6 -0.7 -0.8 -0.9 -1.0 -0.5 0 -0.2 -0.4 -0.1 -0.3 1.6 1.2 2.0 2.8 2.4 -1.2 -1.6 -2.0 -0.02 -1.0 -10 0 -20 -0.1 -0.4 -0.8 h fe , normalized dc current gain v, voltage (volts) v ce , collector-emitter voltage (v) vb , temperature coefficient (mv/ c) 1.5 1.0 0.7 0.5 0.3 -0.2 -10 -100 -1.0 t a = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = -10 v v ce = -10 v t a = 25 c -55 c to +125 c i c = -100 ma i c = -20 ma -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 i c = -200 ma i c = -50 ma i c = -10 ma figure 11. capacitances v r , reverse voltage (volts) 10 figure 12. current ? gain ? bandwidth product i c , collector current (madc) -0.4 1.0 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 -0.5 c, capacitance (pf) f, current-gain - bandwidth product (mhz) t t a = 25 c c ob c ib -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 150 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 v ce = -10 v t a = 25 c t a = 25 c 1.0
bc856bdw1t1g, sbc856bdw1t1g series, bc857bdw1t1g, sbc857bdw1t1g series, bc858cdw1t1g series http://onsemi.com 5 figure 13. thermal response figure 14. active region safe operating area v ce , collector-emitter voltage (v) -200 -1.0 i c , collector current (ma) t a = 25 c bonding wire limit thermal limit second breakdown limit 3 ms t j = 25 c -100 -50 -10 -5.0 -2.0 -5.0 -10 -30 -45 -65 -100 1 s bc558 bc557 bc556 the safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation. collector load lines for specific circuits must fall below the limits indicated by the applicable curve. the data of figure 14 is based upon t j(pk) = 150 c; t c or t a is variable depending upon conditions. pulse curves are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 13. at high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. t, time (ms) 1.0 r(t), transient thermal 1.0 0 resistance (normalized) 0.1 0.01 0.001 10 100 1.0k 10k 100k d = 0.5 0.2 0.1 0.05 single pulse z ja (t) = r(t) r ja r ja = 328 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) ? t c = p (pk) r jc (t) t 1 t 2 p (pk) duty cycle, d = t 1 /t 2 1.0m 0.02 0.01
bc856bdw1t1g, sbc856bdw1t1g series, bc857bdw1t1g, sbc857bdw1t1g series, bc858cdw1t1g series http://onsemi.com 6 ordering information device device marking package shipping ? bc856bdw1t1g 3b sot ? 363 (pb ? free) 3,000 / tape & reel sbc856bdw1t1g 3b sot ? 363 (pb ? free) 3,000 / tape & reel bc856bdw1t3g 3b sot ? 363 (pb ? free) 10,000 / tape & reel sbc856bdw1t3g 3b sot ? 363 (pb ? free) 10,000 / tape & reel bc857bdw1t1g 3f sot ? 363 (pb ? free) 3,000 / tape & reel sbc857bdw1t1g 3f sot ? 363 (pb ? free) 3,000 / tape & reel bc857cdw1t1g 3g sot ? 363 (pb ? free) 3,000 / tape & reel SBC857CDW1T1G 3g sot ? 363 (pb ? free) 3,000 / tape & reel bc858cdw1t1g 3l sot ? 363 (pb ? free) 3,000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
bc856bdw1t1g, sbc856bdw1t1g series, bc857bdw1t1g, sbc857bdw1t1g series, bc858cdw1t1g series http://onsemi.com 7 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419b ? 01 obsolete, new standard 419b ? 02. e 0.2 (0.008) mm 123 d e a1 a a3 c l 654 ? e ? b 6 pl sc ? 88/sc70 ? 6/sot ? 363 case 419b ? 02 issue w dim min nom max millimeters a 0.80 0.95 1.10 a1 0.00 0.05 0.10 a3 b 0.10 0.21 0.30 c 0.10 0.14 0.25 d 1.80 2.00 2.20 0.031 0.037 0.043 0.000 0.002 0.004 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 min nom max inches 0.20 ref 0.008 ref h e h e e 1.15 1.25 1.35 e 0.65 bsc l 0.10 0.20 0.30 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.004 0.008 0.012 0.078 0.082 0.086 style 1: pin 1. emitter 2 2. base 2 3. collector 1 4. emitter 1 5. base 1 6. collector 2 mm inches scale 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 bc856bdw1t1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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